Diodes Incorporated
DSS5160FDB-7
Bipolar Transistors - BJT SS Low Sat Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- U-DFN2020-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- - 60 V
- Collector- Base Voltage VCBO
- - 60 V
- Emitter- Base Voltage VEBO
- - 7 V
- Collector-Emitter Saturation Voltage
- - 180 mV
- Maximum DC Collector Current
- - 1.5 A
- Gain Bandwidth Product fT
- 65 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- - 1 A
- DC Collector/Base Gain hfe Min
- 170 at - 100 mA, - 2 V
Show more parameters (2)
- Pd - Power Dissipation
- 405 mW
- Unit Weight
- 0.000238 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.