onsemi
2N5195G
Bipolar Transistors - BJT 4A 80V 40W PNP
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5195
- Package
- TO-225-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
18 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 4 A
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.4 V
- Pd - Power Dissipation
- 40 W
- Gain Bandwidth Product fT
- 2 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (6)
- Continuous Collector Current
- 4 A
- Country of Assembly
- CN
- Country of Diffusion
- MY
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 20
- Unit Weight
- 0.023986 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.