Advanced Semiconductor, Inc.
MRF151GB
RF MOSFET Transistors RF Transistor
Basic Information
- Manufacturer
- Advanced Semiconductor, Inc.
- Product Category
- RF MOSFET Transistors
- Package
- SOT-262A
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 40 A
- Vds - Drain-Source Breakdown Voltage
- 125 V
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Configuration
- Dual
- Operating Frequency
- 175 MHz
- Type
- RF Power MOSFET
- Pd - Power Dissipation
- 500 W
- Vgs - Gate-Source Voltage
- 40 V
- Vgs th - Gate-Source Threshold Voltage
- 5 V
Show more parameters (1)
- Unit Weight
- 0.001058 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.