Diodes Incorporated
ZXMC10A816N8TC
MOSFET 100V COMPLEMENTARY DUAL ENHANCEMNT MODE
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- ZXMC10A8
- Package
- SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 2.1 A, 2.2 A
- Rds On - Drain-Source Resistance
- 230 mOhms, 235 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.7 V, 2 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 9.2 nC, 16.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.8 W
Show more parameters (12)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Height
- 1.5 mm
- Length
- 4.95 mm
- Transistor Type
- 1 N-Channel, 1 P-Channel
- Width
- 3.95 mm
- Forward Transconductance - Min
- 4.8 S, 4.7 S
- Fall Time
- 5 ns, 12 ns
- Rise Time
- 2.1 ns, 5.2 ns
- Typical Turn-Off Delay Time
- 12.1 ns, 20 ns
- Typical Turn-On Delay Time
- 2.9 ns, 4.3 ns
- Unit Weight
- 0.002610 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.