Toshiba
RN1416,LF
Bipolar Transistors - Pre-Biased S-MINI PLN TRANSIST Pd=200mW F=1MHz
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1416
- Package
- TO-236MOD
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- Typical Input Resistor
- 4.7 kOhms
- Typical Resistor Ratio
- 0.47
- DC Collector/Base Gain hfe Min
- 50
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Pd - Power Dissipation
- 200 mW
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 7 V
- Height
- 1.1 mm
- Length
- 2.9 mm
Show more parameters (3)
- Type
- NPN Epitaxial Silicon Transistor
- Width
- 1.5 mm
- Maximum DC Collector Current
- 100 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.