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Toshiba

2SC2714-O(TE85L,F)

RF Bipolar Transistors RF Device FM band 30V Amp 23dB 100mW

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
RF Bipolar Transistors
Series
2SC2714
Package
SC-59-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

17 parameters
Transistor Type
Bipolar
Technology
Si
Transistor Polarity
NPN
DC Collector/Base Gain hfe Min
40
Collector- Emitter Voltage VCEO Max
30 V
Emitter- Base Voltage VEBO
4 V
Continuous Collector Current
20 mA
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 125 C
Configuration
Single
Collector- Base Voltage VCBO
40 V
DC Current Gain hFE Max
200
Show more parameters (5)
Operating Frequency
550 MHz (Typ)
Operating Temperature Range
- 55 C to + 125 C
Type
FM Frequency Amplifier
Pd - Power Dissipation
100 mW
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SC2714-O(TE85L,F) Specifications and Datasheet | ChipSourceHub