Central Semiconductor
2N6388
Bipolar Transistors - BJT 80Vcbo 80Vceo 5.0Vebo 10A 250mA
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N6388
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 80 V
- Collector-Emitter Saturation Voltage
- 2 V
- Gain Bandwidth Product fT
- 20 MHz
- DC Current Gain hFE Max
- 20000
- Continuous Collector Current
- 10 A
- DC Collector/Base Gain hfe Min
- 1000
- Pd - Power Dissipation
- 65 W
- Part # Aliases
- 2N6388 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.