Toshiba
2SC5095-O(TE85L,F)
Bipolar Transistors - BJT Radio-Freq Bipolar 15mA 100mW 10V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC5095
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 10 V
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 1.5 V
- Maximum DC Collector Current
- 15 mA
- Gain Bandwidth Product fT
- 10 GHz
- DC Current Gain hFE Max
- 160
- Continuous Collector Current
- 15 mA
- DC Collector/Base Gain hfe Min
- 50
- Pd - Power Dissipation
- 100 mW
- Unit Weight
- 0.000176 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.