Nexperia
BCM856BS,115
Bipolar Transistors - BJT COMPLEX DISCRETE S2022D/SOT45
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- TSSOP-6
- Mounting Style
- SMD/SMT
- Packaging
- 1 A
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- - 65 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- - 5 V
- Maximum DC Collector Current
- - 200 mA
- Gain Bandwidth Product fT
- 175 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 1 mm
- Length
- 2.2 mm
- Width
- 1.35 mm
Show more parameters (5)
- Continuous Collector Current
- - 100 mA
- DC Collector/Base Gain hfe Min
- 290
- Pd - Power Dissipation
- 200 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.035274 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.