Infineon Technologies
BF 888 H6327
RF Bipolar Transistors RF BIP TRANSISTOR
Basic Information
- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BF888
- Package
- SOT-343
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Type
- Bipolar Power
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 250
- Collector- Emitter Voltage VCEO Max
- 4 V
- Emitter- Base Voltage VEBO
- 13 V
- Continuous Collector Current
- 30 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Type
- RF Bipolar Power
- Pd - Power Dissipation
- 160 mW
Show more parameters (1)
- Part # Aliases
- BF888H6327XT BF888H6327XTSA1 SP000745170
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.