ON Semiconductor
MMJT350T1G
Bipolar Transistors - BJT 0.5A 30V 2.75W PNP
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MMJT350T1
- Package
- SOT-223-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 300 V
- Collector- Base Voltage VCBO
- 300 V
- Emitter- Base Voltage VEBO
- 3 V
- Maximum DC Collector Current
- 0.5 A
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 1.57 mm
- Length
- 6.5 mm
- Width
- 3.5 mm
- Continuous Collector Current
- 0.5 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 2.75 W
- Unit Weight
- 0.003951 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.