STMicroelectronics
STW32NM50N
MOSFET N-Ch 500V 0.13 Ohm 22A MDmesh II FET
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Series
- STW32NM50N
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Id - Continuous Drain Current
- 13.86 A
- Rds On - Drain-Source Resistance
- 130 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 25 V
- Qg - Gate Charge
- 62.5 nC
- Pd - Power Dissipation
- 190 W
- Configuration
- Single
- Tradename
- MDmesh
Show more parameters (6)
- Transistor Type
- 1 N-Channel
- Fall Time
- 23.6 ns
- Rise Time
- 9.5 ns
- Typical Turn-Off Delay Time
- 110 ns
- Typical Turn-On Delay Time
- 21.5 ns
- Unit Weight
- 1.340411 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.