Central Semiconductor
BFX34
Bipolar Transistors - BJT NPN 120Vcbo 60Vceo 6.0Vebo 5.0A 1.0W
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BFX34
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1 V
- Gain Bandwidth Product fT
- 70 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 150 at 2 A, 2 V
- Continuous Collector Current
- 5 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 40 at 2 A, 2 V
- Pd - Power Dissipation
- 5 W
- Part # Aliases
- BFX34 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.