Toshiba
2SC4915-O,LF
Bipolar Transistors - BJT Radio-Frequency Bipolar Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC4915
- Package
- SOT-416-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 4 V
- Maximum DC Collector Current
- 20 mA
- Gain Bandwidth Product fT
- 550 MHz
- Maximum Operating Temperature
- + 125 C
- DC Current Gain hFE Max
- 200 at 1 mA, 6 V
- DC Collector/Base Gain hfe Min
- 40 at 1 nA, 6 V
- Pd - Power Dissipation
- 100 mW
Show more parameters (1)
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.