STMicroelectronics
STWA65N65DM2AG
MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- MOSFET
- Package
- TO-247-3
- Mounting Style
- Through Hole
Technical Specifications
19 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 60 A
- Rds On - Drain-Source Resistance
- 50 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 120 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 446 W
Show more parameters (7)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Fall Time
- 11.5 ns
- Rise Time
- 13.5 ns
- Typical Turn-Off Delay Time
- 114 ns
- Typical Turn-On Delay Time
- 33 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.