Central Semiconductor
2N2712 TIN/LEAD
Bipolar Transistors - BJT NPN 18Vcbo 18Vceo 5.0Vebo 18Vcb 2.8dB
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N2712
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
7 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 18 V
- Emitter- Base Voltage VEBO
- 5 V
- DC Collector/Base Gain hfe Min
- 75
- DC Current Gain hFE Max
- 250
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.