Diodes Incorporated
DSS4160DS-7
Bipolar Transistors - BJT NPN, NPN 60Vceo 1A 1.1W 200Hfe 150MHz
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- DSS41
- Package
- SOT-26-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 60 mV
- Maximum DC Collector Current
- 2 A
- Gain Bandwidth Product fT
- 220 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 1 A
- DC Collector/Base Gain hfe Min
- 250 at 1 mA, 5 V
Show more parameters (1)
- Unit Weight
- 0.000529 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.