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MACOM

MRF10031

RF Bipolar Transistors

Basic Information

View Datasheet ↗
Manufacturer
MACOM
Product Category
RF Bipolar Transistors
Package
332A-3

Technical Specifications

13 parameters
Transistor Type
Bipolar Power
Technology
Si
Transistor Polarity
NPN
DC Collector/Base Gain hfe Min
20
Collector- Emitter Voltage VCEO Max
55 V
Emitter- Base Voltage VEBO
3.5 V
Continuous Collector Current
3 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 200 C
Configuration
Single
Operating Frequency
1.215 GHz
Type
RF Bipolar Power
Show more parameters (1)
Pd - Power Dissipation
110 W

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MRF10031 Specifications and Datasheet | ChipSourceHub