ON Semiconductor / Fairchild
FJAF4210OTU
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- FJAF4210
- Package
- TO-3PF-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
19 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 140 V
- Collector- Base Voltage VCBO
- - 200 V
- Emitter- Base Voltage VEBO
- - 6 V
- Collector-Emitter Saturation Voltage
- - 0.5 V
- Maximum DC Collector Current
- 10 A
- Gain Bandwidth Product fT
- 30 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 180
- Height
- 16.7 mm
Show more parameters (7)
- Length
- 15.7 mm
- Width
- 5.7 mm
- Continuous Collector Current
- - 10 A
- DC Collector/Base Gain hfe Min
- 50
- Pd - Power Dissipation
- 80 W
- Part # Aliases
- FJAF4210OTU_NL
- Unit Weight
- 0.245577 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.