Qorvo
TGF2955
RF JFET Transistors DC-12GHz 40W 32V GaN P3dB @ 3GHz 46.5dBm
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Package
- Die
- Mounting Style
- SMD/SMT
- Packaging
- Gel Pack
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 19.2 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 32 V
- Id - Continuous Drain Current
- 2.5 A
- Output Power
- 46.4 dBm
- Maximum Drain Gate Voltage
- 100 V
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 41 W
- Configuration
- Single
Show more parameters (3)
- Operating Frequency
- 15 GHz
- Operating Temperature Range
- - 65 C to + 150 C
- Part # Aliases
- 1112260
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.