Comchip Technology
2N3906-G
Bipolar Transistors - BJT -40V -200mA TO-92
Basic Information
View Datasheet ↗- Manufacturer
- Comchip Technology
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3906
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Ammo Pack
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 40 V
- Collector- Base Voltage VCBO
- - 40 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 400 mV
- Maximum DC Collector Current
- - 0.2 A
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 400
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 625 mW
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.