Qorvo
QPD1013SR
RF JFET Transistors DC-2.7GHz 150W PAE 64.8%
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Package
- DFN-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 21.8 dB
- Transistor Polarity
- N-Channel
- Id - Continuous Drain Current
- 1.7 A
- Output Power
- 178 W
- Maximum Drain Gate Voltage
- 65 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 67 W
- Application
- Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications
- Configuration
- Single Triple Drain
Show more parameters (3)
- Operating Frequency
- 1.2 GHz to 2.7 GHz
- Development Kit
- QPD1013EVB01
- Moisture Sensitive
- Yes
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.