Toshiba
SSM3J112TU(TE85L)
MOSFET Vds=-30V Id=-1.1A 3Pin
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFET
- Series
- SSM3J112TU
- Package
- UFM-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Not compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 1.1 A
- Rds On - Drain-Source Resistance
- 610 mOhms
- Vgs - Gate-Source Voltage
- 20 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 800 mW
- Configuration
- Single
- Channel Mode
- Enhancement
Show more parameters (8)
- Height
- 0.7 mm
- Length
- 2 mm
- Product
- MOSFET Small Signal
- Transistor Type
- 1 P-Channel
- Type
- Small Signal
- Width
- 1.7 mm
- Forward Transconductance - Min
- 1 S / 0.5 S
- Unit Weight
- 0.004395 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.