STMicroelectronics
SCTWA70N120G2V-4
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- SiC MOSFETs
- Package
- HIP247-4
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
20 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 91 A
- Rds On - Drain-Source Resistance
- 30 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage
- 2.45 V
- Qg - Gate Charge
- 150 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 200 C
- Pd - Power Dissipation
- 547 W
- Channel Mode
- Enhancement
Show more parameters (8)
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 18 ns
- Product
- SiC MOSFETS
- Rise Time
- 9 ns
- Technology
- SiC
- Typical Turn-Off Delay Time
- 36 ns
- Typical Turn-On Delay Time
- 15.5 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.