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NXP Semiconductors

AFT20S015GNR1

RF MOSFET Transistors AF 1.8-2.7G 15W TO270-2G

Basic Information

View Datasheet ↗
Manufacturer
NXP
Brand
NXP Semiconductors
Product Category
RF MOSFET Transistors
Series
AFT20S015N
Package
TO-270-2
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
E

Technical Specifications

17 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
132 mA
Vds - Drain-Source Breakdown Voltage
- 500 mV, 65 V
Gain
17.6 dB
Output Power
1.5 W
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Configuration
Single
Operating Frequency
100 MHz to 3.6 GHz
Type
RF Power MOSFET
Number of Channels
1 Channel
Show more parameters (5)
Moisture Sensitive
Yes
Vgs - Gate-Source Voltage
11 V
Vgs th - Gate-Source Threshold Voltage
2 V
Part # Aliases
935314968528
Unit Weight
0.019330 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

AFT20S015GNR1 Specifications and Datasheet | ChipSourceHub