Central Semiconductor
2N2857 TIN/LEAD
Bipolar Transistors - BJT 30Vcbo 15Vceo 2.5V 40mA 200mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N2857
- Package
- TO-72-4
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 15 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 2.5 V
- Pd - Power Dissipation
- 200 mW
- Gain Bandwidth Product fT
- 1.9 GHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 40 mA
- Country of Origin
- PH
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 30
- DC Current Gain hFE Max
- 150
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.