Nexperia
PBSS5160QAZ
Bipolar Transistors - BJT 60 V, 1A PNP low VCE sat (BISS) transi
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- DFN-1010D-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 60 V
- Collector- Base Voltage VCBO
- - 60 V
- Emitter- Base Voltage VEBO
- - 7 V
- Collector-Emitter Saturation Voltage
- - 125 mV
- Maximum DC Collector Current
- - 1.5 A
- Gain Bandwidth Product fT
- 150 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- - 1 A
- DC Collector/Base Gain hfe Min
- 160 at - 100 mA, - 2 V
Show more parameters (2)
- Pd - Power Dissipation
- 325 mW
- Qualification
- AEC-Q101
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.