STMicroelectronics
2N2907AUB1
Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N2907AHR
- Package
- UB-4
- Mounting Style
- SMD/SMT
- Packaging
- Tray
- RoHS
- Not Applicable
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 400 mV
- Pd - Power Dissipation
- 730 mW
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 500 mA
- Country of Origin
- FR
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 2
- DC Current Gain hFE Max
- 300
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.