ROHM Semiconductor
2SC5916TLR
Bipolar Transistors - BJT NPN 30V 2A
Basic Information
- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 2 A
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 6 V
- Pd - Power Dissipation
- 500 mW
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 2 A
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 180
- DC Current Gain hFE Max
- 180 at 100 mA, 2 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.