Central Semiconductor
2N3251 TIN/LEAD
Bipolar Transistors - BJT 50Vcbo 40Vceo 5.0V 200mA 360mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3251
- Package
- TO-18-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 250 mV
- Pd - Power Dissipation
- 360 mW
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- Continuous Collector Current
- 200 mA
Show more parameters (2)
- Country of Origin
- IN
- DC Collector/Base Gain hfe Min
- 80 at 0.1 mA, 1 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.