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ROHM Semiconductor

IMH10AT110

Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA SOT-457

Basic Information

View Datasheet ↗
Manufacturer
ROHM Semiconductor
Product Category
Bipolar Transistors - Pre-Biased
Series
IMH10
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Configuration
Dual
Transistor Polarity
NPN
Typical Input Resistor
2.2 kOhms
Typical Resistor Ratio
0.047
DC Collector/Base Gain hfe Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
150 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
80
Show more parameters (3)
Height
1.1 mm
Length
2.9 mm
Width
1.6 mm

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

IMH10AT110 Specifications and Datasheet | ChipSourceHub