Rectron
2N5551-T
Bipolar Transistors - BJT NPN 0.6A 160V
Basic Information
View Datasheet ↗- Manufacturer
- Rectron
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 160 V
- Collector- Base Voltage VCBO
- 180 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 0.2 V
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 250
- Continuous Collector Current
- 0.6 A
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 30
- Pd - Power Dissipation
- 625 mW
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.