Central Semiconductor
2N5375
Bipolar Transistors - BJT PNP Vcbo 40Vcbo 30Vceo 5.0Vebo 360mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Gain Bandwidth Product fT
- 150 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 500 mA
- DC Collector/Base Gain hfe Min
- 20 at 1 mA, 10 V
Show more parameters (2)
- Pd - Power Dissipation
- 360 mW
- Part # Aliases
- 2N5375 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.