Infineon Technologies
BCR 129 E6327
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- BCR129
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- Typical Input Resistor
- 10 kOhms
- DC Collector/Base Gain hfe Min
- 120
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 200 mW
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Emitter- Base Voltage VEBO
- 50 V
- Height
- 1 mm
Show more parameters (5)
- Length
- 2.9 mm
- Width
- 1.3 mm
- Maximum DC Collector Current
- 100 mA
- Part # Aliases
- BCR129E6327HTSA1 BCR129E6327XT SP000012520
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.