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Toshiba

RN1510(TE85L,F)

Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 SMV, 50V, 100A

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
Bipolar Transistors - Pre-Biased
Series
RN1510
Package
SMV-5
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Configuration
Dual
Transistor Polarity
NPN
Typical Input Resistor
4.7 kOhms
DC Collector/Base Gain hfe Min
120
Maximum Operating Frequency
250 MHz
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
100 mA
Peak DC Collector Current
100 mA
Pd - Power Dissipation
300 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Collector- Base Voltage VCBO
50 V
Show more parameters (3)
DC Current Gain hFE Max
700
Emitter- Base Voltage VEBO
5 V
Operating Temperature Range
- 55 C to + 150 C

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RN1510(TE85L,F) Specifications and Datasheet | ChipSourceHub