Infineon Technologies
BFP 640 H6327
RF Bipolar Transistors RF BIP TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFP640
- Package
- SOT-343
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 110
- Collector- Emitter Voltage VCEO Max
- 4 V
- Emitter- Base Voltage VEBO
- 1.2 V
- Continuous Collector Current
- 50 mA
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Operating Frequency
- 40 GHz
- Type
- RF Silicon Germanium
Show more parameters (3)
- Pd - Power Dissipation
- 200 mW
- Part # Aliases
- BFP640H6327XTSA1 BFP64H6327XT SP000745306
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.