onsemi
KSD1616AGBU
Bipolar Transistors - BJT NPN Epitaxial Sil
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- KSD1616A
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 1 A
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 150 mV
- Pd - Power Dissipation
- 750 mW
- Gain Bandwidth Product fT
- 160 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 1 A
Show more parameters (5)
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 135
- DC Current Gain hFE Max
- 600
- Part # Aliases
- KSD1616AGBU_NL
- Unit Weight
- 0.006314 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.