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ON Semiconductor

2SC5227A-4-TB-E

Bipolar Transistors - BJT ULAHIGH-FREQUENCY TRANSISTOR

Basic Information

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Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
Series
2SC5227A
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

13 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
10 V
Collector- Base Voltage VCBO
20 V
Emitter- Base Voltage VEBO
2 V
Maximum DC Collector Current
70 mA
Gain Bandwidth Product fT
7 GHz
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
270
DC Collector/Base Gain hfe Min
60
Pd - Power Dissipation
200 mW
Show more parameters (1)
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SC5227A-4-TB-E Specifications and Datasheet | ChipSourceHub