Central Semiconductor
2N2270
Bipolar Transistors - BJT NPN Hi-Spd SW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N2270
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 900 mV
- Maximum DC Collector Current
- 150 mA
- Gain Bandwidth Product fT
- 100 MHz
- DC Current Gain hFE Max
- 200
- Height
- 6.6 mm
- Length
- 9.4 mm
- Width
- 9.4 mm
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 50
- Part # Aliases
- 2N2270 PBFREE
- Unit Weight
- 0.035486 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.