ROHM Semiconductor
R8002ANJGTL
MOSFETs TO263 800V 2A N-CH MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFETs
- Package
- TO-263S-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
21 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Id - Continuous Drain Current
- 2 A
- Rds On - Drain-Source Resistance
- 4.3 Ohms
- Vgs - Gate-Source Voltage
- - 30 V, 30 V
- Vgs th - Gate-Source Threshold Voltage
- 5 V
- Qg - Gate Charge
- 13 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 62 W
Show more parameters (9)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- KR
- Fall Time
- 70 ns
- Forward Transconductance - Min
- 0.5 S
- Rise Time
- 25 ns
- Typical Turn-Off Delay Time
- 35 ns
- Typical Turn-On Delay Time
- 20 ns
- Part # Aliases
- R8002ANJ
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.