Diodes Incorporated
MJD44H11-13
Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 16 A
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 1 V
- Pd - Power Dissipation
- 2.7 W
- Gain Bandwidth Product fT
- 3 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (3)
- Continuous Collector Current
- 8 A
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 40
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.