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ON Semiconductor / Fairchild

FQA32N20C

MOSFET 200V N-Channel Advance Q-FET

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Brand
ON Semiconductor / Fairchild
Product Category
MOSFET
Series
FQA32N20C
Package
TO-3PN-3
Mounting Style
Through Hole
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

24 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
200 V
Id - Continuous Drain Current
32 A
Rds On - Drain-Source Resistance
82 mOhms
Vgs - Gate-Source Voltage
30 V
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
204 W
Configuration
Single
Channel Mode
Enhancement
Show more parameters (12)
Tradename
QFET
Height
20.1 mm
Length
16.2 mm
Transistor Type
1 N-Channel
Type
MOSFET
Width
5 mm
Forward Transconductance - Min
20 S
Fall Time
210 ns
Rise Time
270 ns
Typical Turn-Off Delay Time
245 ns
Typical Turn-On Delay Time
25 ns
Unit Weight
0.225789 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

FQA32N20C Specifications and Datasheet | ChipSourceHub