IXYS
IXZR18N50
RF MOSFET Transistors 18A 500V N Channel ZMOS Switch MOSFET ISO Plus 247
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- RF MOSFET Transistors
- Series
- IXZR18
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 19 A
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Rds On - Drain-Source Resistance
- 370 mOhms
- Output Power
- 350 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Type
- RF Power MOSFET
- Forward Transconductance - Min
- 6.7 S
- Number of Channels
- 1 Channel
- Qg - Gate Charge
- 42 nC
Show more parameters (2)
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4.6 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.