Toshiba
2SA1362-GR(T5L,F,T
Bipolar Transistors - BJT Bipolar Small-Signal Transistors
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA1362
- Package
- SOT-346-3
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 15 V
- Collector- Base Voltage VCBO
- 15 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 0.8 A
- Gain Bandwidth Product fT
- 120 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 200 at 100 mA, 1 V
- Height
- 1.1 mm
- Length
- 2.9 mm
- Width
- 1.5 mm
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 200 at 100 mA, 1 V
- Pd - Power Dissipation
- 200 mW
- Unit Weight
- 0.000423 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.