ON Semiconductor / Fairchild
FJI5603DTU
Bipolar Transistors - BJT NPN Silicon
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Series
- FJI5603D
- Package
- I2PAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 800 V
- Collector- Base Voltage VCBO
- 1.6 kV
- Emitter- Base Voltage VEBO
- 12 V
- Collector-Emitter Saturation Voltage
- 1.2 V
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 5 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 20
- Height
- 9.65 mm
- Length
- 10.29 mm
Show more parameters (4)
- Width
- 4.83 mm
- DC Collector/Base Gain hfe Min
- 20
- Pd - Power Dissipation
- 100000 mW
- Unit Weight
- 0.073511 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.