ON Semiconductor
2SB1215S-TL-E
Bipolar Transistors - BJT BIP PNP 3A 100V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SB1215
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 100 V
- Collector- Base Voltage VCBO
- - 120 V
- Emitter- Base Voltage VEBO
- - 6 V
- Collector-Emitter Saturation Voltage
- - 0.2 V
- Maximum DC Collector Current
- - 6 A
- Gain Bandwidth Product fT
- 130 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 400
- Continuous Collector Current
- - 3 A
Show more parameters (1)
- Pd - Power Dissipation
- 20 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.