ON Semiconductor
2SD1815S-E
Bipolar Transistors - BJT BIP NPN 3A 100V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SD1815
- Package
- TO-251-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 150 mV
- Maximum DC Collector Current
- 3 A
- Gain Bandwidth Product fT
- 180 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 400
- DC Collector/Base Gain hfe Min
- 140
- Pd - Power Dissipation
- 20 W
Show more parameters (1)
- Unit Weight
- 0.011993 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.