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ON Semiconductor

NTR1P02T1G

MOSFET -20V -1A P-Channel

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
MOSFET
Series
NTR1P02
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

25 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
1 A
Rds On - Drain-Source Resistance
180 mOhms
Vgs th - Gate-Source Threshold Voltage
1.1 V
Vgs - Gate-Source Voltage
10 V
Qg - Gate Charge
2.5 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
400 mW
Show more parameters (13)
Configuration
Single
Channel Mode
Enhancement
Height
0.94 mm
Length
2.9 mm
Product
MOSFET Small Signal
Transistor Type
1 P-Channel
Type
MOSFET
Width
1.3 mm
Fall Time
3 ns
Rise Time
9 ns
Typical Turn-Off Delay Time
9 ns
Typical Turn-On Delay Time
7 ns
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

NTR1P02T1G Specifications and Datasheet | ChipSourceHub