ON Semiconductor
NSS12100XV6T1G
Bipolar Transistors - BJT 12V PNP LOW VCE(SAT) XTR
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS12100XV6
- Package
- SOT-563-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 12 V
- Collector- Base Voltage VCBO
- - 12 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- - 400 mV
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 0.55 mm
- Length
- 1.6 mm
Show more parameters (5)
- Width
- 1.2 mm
- Continuous Collector Current
- - 1 A
- DC Collector/Base Gain hfe Min
- 150
- Pd - Power Dissipation
- 500 mW
- Unit Weight
- 0.000106 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.