ON Semiconductor
MJE5851G
Bipolar Transistors - BJT 8A 350V 80W PNP
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MJE5851
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 350 V
- Collector- Base Voltage VCBO
- 400 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 2 V
- Maximum DC Collector Current
- 8 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 15.75 mm
- Length
- 10.53 mm
- Width
- 4.83 mm
Show more parameters (4)
- Continuous Collector Current
- 8 A
- DC Collector/Base Gain hfe Min
- 15
- Pd - Power Dissipation
- 80 W
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.